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Journals and Conferences
Photonic generation of high-power pulsed microwave signals is demonstrated using charge-compensated modified unitraveling-carrier photodiodes. The impulse response without RF modulation achieved… (More)
InP-based high-power and high-speed modified unitraveling carrier photodiodes heterogeneously integrated on silicon-on-insulator waveguides are demonstrated. Internal responsivity up to 0.95A/W and… (More)
Back-illuminated flip-chip-bonded charge-compensated modified uni-traveling-carrier photodiodes (PDs) with bandwidths in excess of 110 GHz are demonstrated. PDs with 10- and 6-μm-diameters deliver RF… (More)
We demonstrate InP-based modified uni-traveling carrier (MUTC) photodiodes (PDs) with top p-contact on silicon-on-insulator (SOI) nano-waveguides. The photodiodes have a low dark current of 10 nA,… (More)
We demonstrate InP-based modified uni-traveling carrier photodiodes on silicon-on-insulator (SOI) waveguides with an internal responsivity of 0.95 A/W and 48 GHz bandwidth. The RF output power… (More)
This talk will describe modified uni-traveling carrier photodiodes (MUTCs) that have achieved high RF output power and high saturation current. Discrete photodiodes, 4×1 phase matched arrays, and… (More)
A high-power V-band photodiode integrated with a coplanar patch antenna is demonstrated. Modified unitraveling carrier photodiodes with broad 3-dB bandwidth (60 GHz) and high-output power up to 16.7… (More)
We demonstrate hermetically packaged InGaAs/InP photodetector modules for high performance microwave photonic applications. The devices employ an advanced photodiode epitaxial layer known as the… (More)
A 1.8 W RF output power at 10 GHz and 60 % power conversion efficiency (PCE) at 6 GHz have been achieved using a modified uni-traveling-carrier photodiode flip-chip bonded on diamond.
We demonstrate 16.2 dB gain in a high-linearity 20 GHz IM/DD analog photonic link by utilizing a quadrature-biased dual-output Mach-Zehnder modulator and a high-power balanced photodiode.