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A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices. The accuracy of the model is validated with 2-D simulations and experimental data. In addition, the effect of the gate resistance on the device(More)
Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are(More)
Web Sites: BSIM4 web site with BSIM source code and documents: Acknowledgement: The development of BSIM4.6.1 benefited from the input of many BSIM users, especially the Compact Model Council (CMC) member companies. and Shigetaka Kumashiro at NEC, Richard Taylor at NSC, for their valuable assistance in identifying the desirable modifications and testing of(More)
In this article we extend the class of non-negative, asymmetric kernel density estimators and propose Birnbaum-Saunders (BS) and lognormal (LN) kernel density functions. The density functions have bounded support on [0,∞). Both BS and LN kernel estimators are free of boundary bias, non-negative, with natural varying shape, and achieve the optimal rate of(More)
The aim of the present study was to investigate the radiosensitizing effect of genistein, and the corresponding mechanisms of action on breast cancer cells with different estrogen receptor (ER) status. Human breast cancer cell lines such as MCF-7 (ER-positive, harboring wild-type p53) and MDA-MB-231 (ER-negative, harboring mutant p53) were irradiated with(More)