XiaoYan Tang

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A novel empirical large signal direct current (DC) I-V model is presented considering the high saturation voltage, high pinch-off voltage, and wide operational range of drain voltage for 4H-SiC MESFETs. A comparison of the presented model with Statz, Materka, Curtice-Cubic, and recently reported 4H-SiC MESFET large signal I-V models is made through the(More)
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