Xiangshui Miao

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Compact and power-efficient plastic electronic synapses are of fundamental importance to overcoming the bottlenecks of developing a neuromorphic chip. Memristor is a strong contender among the various electronic synapses in existence today. However, the speeds of synaptic events are relatively slow in most attempts at emulating synapses due to the(More)
Nanoscale inorganic electronic synapses or synaptic devices, which are capable of emulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide(More)
The functional layers of few-layer two-dimensional (2-D) thin flakes on flexible polymers for stretchable applications have attracted much interest. However, most fabrication methods are "indirect" processes that require transfer steps. Moreover, previously reported "transfer-free" methods are only suitable for graphene and not for other few-layer 2-D thin(More)
Graphene deposited on various substrates has attracted the attention of the scientific and technical communities for use in a wide range of applications. Graphene on substrates is commonly produced by two types of methods, namely, methods that require a transfer step and transfer-free methods. Compared with methods that require a transfer step,(More)
Combined ab initio and micromagnetic simulations are carried out to demonstrate the feasibility on the electrical manipulation of spin-wave propagation in ultrathin Fe films. It is discovered that the exchange interaction can be substantially weakened under the influence of electric field applied perpendicular to the magnetic film surface. Furthermore, we(More)
The AgInSbTe memristor shows gradual resistance tuning characteristics, which makes it a potential candidate to emulate biological plastic synapses. The working mechanism of the device is complex, and both intrinsic charge-trapping mechanism and extrinsic electrochemical metallization effect are confirmed in the AgInSbTe memristor. Mathematical model of the(More)
The memristor is a promising candidate for the next generation non-volatile memory, especially based on HfO2-x, given its compatibility with advanced CMOS technologies. Although various resistive transitions were reported independently, customized binary and multi-level memristors in unified HfO2-x material have not been studied. Here we report Pt/HfO2-x/Ti(More)
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