Xianghao Wang

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P-type hydrogenated microcrystalline silicon (muc-Si:H) thin films (~100 nm) were deposited using plasma enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150degC. RF power density and pressure were varied among films. These films reach a dark conductivity (sigma<sub>d</sub>) of 10<sup>-1</sup> S/cm, activation energy (E<sub>a</sub>)(More)
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