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Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. By considering a circular thin-film/substrate system subject to arbitrarily non-uniform misfit strain distributions, we derive(More)
Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. misfit strain: in thin films bonded on plate substrates/substrate systems: the relation between non-uniform film stresses and system(More)
Current methodologies used for the inference of thin film stress through curvature measurements are strictly restricted to uniform film stress and system curvature states over the entire system of a single thin film on a substrate. By considering a circular multilayer thin film/substrate system subjected to nonuniform temperature distributions, we derive(More)
Current methodologies used for the inference of thin film stress through curvature measurement are strictly restricted to stress and curvature states that are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to a single layer of thin film deposited on a substrate subjected to the non-uniform(More)
Current methodologies used for the inference of thin film stress through system curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. Recently Huang, Rosakis, and coin press] established methods for the film/substrate system subject to nonuniform misfit strain(More)