Xia An

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It is predicted that CMOS technology will probably enter into 22 nm node around 2012. Scaling of CMOS logic technology from 32 to 22 nm node meets more critical issues and needs some significant changes of the technology, as well as integration of the advanced processes. This paper will review the key processing technologies which can be potentially(More)
In this paper, heavy-ion-induced permanent damage in fully depleted silicon-on-insulator (FD SOI) devices are investigated. After exposure to heavy ions, the characteristics degradation of FD SOI nMOSFET are presented, which is due to the microdose effect in the oxide layer and the displacement damage in silicon film. Besides, the measured results also(More)
In this paper, Ge surface passivation by GeO2 grown by N2O plasma oxidation is presented and experimentally demonstrated. Results show that stoichiometrically GeO2 can be achieved by N2O plasma oxidation at 350°C. The transmission electron microscope observation reveals that the GeO2/Ge interface is automatically smooth and the thickness of GeO2 is ∼0.9 nm(More)
In this paper, an interface treatment for (100) Ge using HCl cleaning with different concentration and passivation with HCl and NH<sub>4</sub>F is experimentally demonstrated. The root mean square roughness (Rms) of Ge surface is reduced from 1.95nm to 0.274nm by 36% HCl cleaning, due to the high efficiency to remove the sub-oxide on Ge surface. After the(More)
The radiation response of 65nm bulk silicon NMOSFETs is investigated,such as core devices and I/O devices. The results indicate that radiation induced threshold voltage (V<sub>T</sub>) shift is not evident for both types of devices. The degradation of the off-state leakage current of core devices is not significant, which illustrates weak dependence on(More)
In this paper, an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power, more nitrogen plasma will drift to Ge surface to passivate the dangling bonds. It is shown that nitrogen plasma(More)
Ge p-MOSFETs with two kinds of passivation methods, RTO-GeO<sub>2</sub> interfacial layer and nitrogen-plasma-passivation, were fabricated. CV and IV characteristics of both devices were measured and compared systemically. Results show that the RTO-GeO<sub>2</sub> interfacial layer is more efficient in passivating the donor-like interface state near the(More)
The effect of CHF<sub>3</sub> gas flow rate on the trench shape and etch rate was studied for germanium-based device fabrication. In this study, a sidewall tilt angle larger than 80&#x00B0; with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF<sub>6</sub>/CHF<sub>3</sub>/He gas mixture. Then, based on the experimental results,(More)
In this letter, the As<sup>+</sup> implantation after Germanidation technique is comprehensively studied to modulate the Schottky barrier height of NiGe/Ge contact. With the optimized drive-in annealing temperature, ion-implantation energy and dose, the current characteristics of NiGe/p-Ge diode changes from Ohmic to well rectifying with(More)