Xavier Gagnard

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A 3Mega-Pixel back illuminated image sensor in 1T5 architecture and 1.45µm pixel pitch has been successfully developed and characterized. A high quantum efficiency over 60% in the visible light spectrum and a low dark current of 1e-/s at 25°C have been achieved due to dedicated frontside and backside process steps such as antireflective layer adaptation, p(More)
This paper presents a low area, low consumption, 40 GHz low noise amplifier (LNA), a down-converter and an oscillator, from which the performance of a 40 GHz wireless receiver can be estimated. The circuits were realized using a post-processing BCB above-IC technology and 0.13 mum SiGe:C BiCMOS HBT process, and their performance are compared with those(More)
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