Xavier Crispin

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Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical(More)
Low-voltage organic field-effect transistors (OFETs) promise for low power consumption logic circuits. To enhance the efficiency of the logic circuits, the control of the threshold voltage of the transistors are based on is crucial. We report the systematic control of the threshold voltage of electrolyte-gated OFETs by using various gate metals. The(More)
The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to(More)
Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between(More)
On the mode of operation in electrolyte-gated thin film transistors based on Abstract Organic Thin Film Transistors (OTFT), gated through an aqueous electrolyte, have extensively been studied as sensors in various applications. These water-gated devices are known to work both as electrochemical (Organic ElectroChemical Transistor-OECT) and field-effect(More)
Efficiency, current throughput, and speed of electronic devices are to a great extent dictated by charge carrier mobility. The classic approach to impart high carrier mobility to polymeric semiconductors has often relied on the assumption that extensive order and crystallinity are needed. Recently, however, this assumption has been challenged, because high(More)
1  Abstract—We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed from voltage-dependent electric double layer capacitance. The voltage dependent(More)
Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.
Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-EGOFET: Polyelectrolyte-gated organic field effect transistor. Abstract We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome(More)