Xavier Crispin

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Ambipolar polymeric field-effect transistors can be programmed into a p- or n-type mode by using the remanent polarization of a ferroelectric gate insulator. Due to the remanent polarity, the device architecture is suited as a building block in complementary logic circuits and in CMOS-compatible memory cells for non-destructive read-out operations.
On the mode of operation in electrolyte-gated thin film transistors based on Abstract Organic Thin Film Transistors (OTFT), gated through an aqueous electrolyte, have extensively been studied as sensors in various applications. These water-gated devices are known to work both as electrochemical (Organic ElectroChemical Transistor-OECT) and field-effect(More)
The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to(More)
Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between(More)
Efficiency, current throughput, and speed of electronic devices are to a great extent dictated by charge carrier mobility. The classic approach to impart high carrier mobility to polymeric semiconductors has often relied on the assumption that extensive order and crystallinity are needed. Recently, however, this assumption has been challenged, because high(More)
Amphiphilic semiconducting copolymer as compatibility layer for printing polyelectrolyte-EGOFET: Polyelectrolyte-gated organic field effect transistor. Abstract We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome(More)
1  Abstract—We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors. The channel current is expressed as charge drift transport under electric field. The charges accumulated in the channel are considered being contributed from voltage-dependent electric double layer capacitance. The voltage dependent(More)
A mixed ionic-electronic conductor based on nanofibrillated cellulose composited with poly(3,4-ethylene-dioxythio-phene):-poly(styrene-sulfonate) along with high boiling point solvents is demonstrated in bulky electrochemical devices. The high electronic and ionic conductivities of the resulting nanopaper are exploited in devices which exhibit record values(More)
Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future "internet of things" viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite(More)