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Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects.(More)
We report an improved measurement of the neutrino mixing angle θ13 from the Daya Bay Reactor Neutrino Experiment. We exclude a zero value for sin 2θ13 with a significance of 7.7 standard deviations. Electron antineutrinos from six reactors of 2.9 GWth were detected in six antineutrino detectors deployed in two near (flux-weighted baselines of 470 m and 576(More)
Stochastic programming is concerned with practical procedures for decision-making under uncertainty , by modelling uncertainties and risks associated with decisions in a form suitable for optimization. The eld is developing rapidly with contributions from many disciplines such as operations research, probability and statistics, and economics. A stochastic(More)
We report on 2D numerical simulations of laser beam induced current (LBIC) for HgCdTe photovoltaic detector. The effect of junction leakage current on the LBIC signal is investigated, and different leakage paths caused by different reasons in HgCdTe photodiode arrays are taken into account in the simulation. The simulation results are in good agreement with(More)
The intrinsic mechanisms of drain lag and current collapse in GaN-based high-electron-mobility transistors are studied by using two-dimensional numerical simulations. Simulated drain lag characteristics are in good agreement with reported experimental data. The dynamic pictures of trapping of hot electrons under drain-pulse voltages are discussed in detail.(More)
The relation between the household electrical consumption Y and population N for Chinese cities in 2006 has been investigated with the power law scaling form Y = A0N β . It is found that the Chinese cities should be divided into three categories characterized by different scaling exponent β. The first category, which includes the biggest and coastal cities(More)
Undoped GaN-based metal-oxide-semiconductor high-electron-mobility-transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 μm up to 40 μm. With a two-dimensional numerical simulator, we report simulation results of the GaN-based MOS-HEMTs using field-dependent drift velocity model. A developed model,(More)
We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.
We report on 2D numerical simulations of photo-response characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption length and diffusion length are extracted numerically. An empirical formula is proposed to(More)
A dual-band polarization insensitive absorber has been designed and studied in this work. Unlike previous dual band absorber composed of composite structures, only one square metal ring with a slit at the middle of each side has been designed to achieve dual-band absorption. The calculated results show two distinct absorption peaks of 0.96 at 10 GHz and(More)