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High-quality ultrathin film is the key element of hot-electron devices. Using a doped sputtering target, high-performance niobium (Nb) ultrathin films are grown on high-resistivity silicon (Si), magnesium oxide (MgO), and sapphire substrates, optimized by grown 1-nm-thick aluminum nitride (AlN) films on the top. Superconducting transition temperature(More)
We present an antenna-coupled 1 × 64 Nb5N6 microbolometer array detectors for real-time terahertz (THz) imaging. The intrinsic average responsivity of the detectors in the array is 650 V/W, and the corresponding noise equivalent power (NEP) is 17 pW/√Hz. The array chip is combined with a low noise readout circuit with 64 channels. The array(More)
Nb<inf>5</inf>N<inf>6</inf> bolometer is a high sensitive terahertz detector at room temperature. The core part of traditional Nb<inf>5</inf>N<inf>6</inf> bolometer is microbridge with a typical size of 3 &#x03BC;m &#x00D7; 12 &#x03BC;m. We have recently proposed a method using electron beam lithography (EBL) instead of UV lithography on fabrication of(More)
We design a T-shape structure reflecting mirror covered a gold thin film on the high-resistivity silicon substrate (&#x03C1;&#x003D;1000 &#x03A9;&#x00B7;Cm) for the detector array. The electric field distribution of the T-shape structure is simulated by using finite difference time domain (FDTD) solutions in the frequency range from 300 GHz to 400 GHz. The(More)
We have fabricated and characterized ultrathin NbTiN films with high Titanium (Ti) composition for applications of superconducting nanowire single photon detectors (SNSPD). An alloy with 47 wt. % Ti and 53 wt. % Nb as the target material is employed. NbTiN thin films with thicknesses ranging from 5 nm to 20 nm are grown onto MgO (100), Si (100) and(More)
A system to detect the terahertz (THz) pulse signals has been studied based on the superconducting NbN hot electron bolometer (HEB) detectors, which has the noise equivalent power (NEP) of 9&#x00D7;10<sup>-12</sup> W/&#x221A;Hz, together with a Fourier transform spectrometer (FTS). The detector has been driven by an easily adjustable microwave source to its(More)
Intermediate frequency (IF) gain bandwidth (GBW) of terahertz (THz) mixers based on superconducting niobium nitride (NbN) hot electron bolometers (HEBs) has been improved. The IF GBW has been measured by 2 different methods and same values up to 7 GHz have been obtained.
We report on the influence of substrate thickness on the performance of antenna coupled microbolometers for terahertz (THz) detection. Planar antennas with NbsNo&#x0301; microbolometers were fabricated on silicon substrates. Detected voltages of these antenna-coupled microbolometers are altered with a periodic variation from 0.5 THz to 0.75 THz, which is(More)
Superconducting niobium nitride (NbN) hot electron bolometer (HEB) detectors consist of a complementary logarithmic-spiral antenna made of gold and an NbN film (bridge) connecting across the antenna's inner terminals have been fabricated and characterized. For its performance as a heterodyne mixer, the system DSB noise temperature of about 500 K and the(More)
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