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This paper discusses the commonly accepted method for life-time prediction for power converters in traction. The method is based on junction temperature estimation and thermal cycles on a given duty cycle. The predicted numbers of thermal cycles are compared to the curves giving the number of cycles to failure versus temperature cycles. These curves are(More)
This paper reports on the fabrication technology and packaging strategy for 300-V 5-A silicon carbide Schottky diodes with a wide temperature operation range capability (between −170 ◦C and 300 ◦C). These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes. Different endurance tests have been(More)
This work presents experimental comparative results of power cycling capability of SiC Schottky diodes performed on various encapsulation technologies. For the analysis, we used an original concept based on the device self-heating and a dedicated workbench. The aim of our studies is to obtain reliable Silicon Carbide (SiC) devices able to operate at(More)
The virtual prototyping of power electronic converters requires electrothermal models with various abstraction levels and easy identification. Numerous methods for the construction of compact thermal models have been presented in this paper. Few of them propose state-space models, where the model order can be controlled according to the necessity of the(More)
This work analyzes, discusses, and proposes a solution to the problem of the emissivity correction present in infrared thermography when coatings with known emissivity cannot be deposited on the inspected surface. It is shown that the conventional technique based on two reference thermal images and the linearization of the blackbody radiation dependence on(More)
This paper studies the overload turnoff failure in the insulated-gate bipolar transistor (IGBT) devices of power multichip modules for railway traction. After a detailed experimental analysis carried out through a dedicated test circuit, electrothermal simulations at device level are also presented. The simulation strategy has consisted in inducing a(More)