Wudyalew Wondmagegn

Learn More
Finite element device level simulations were used in conjunction with SPICE modeling to design and optimize a complementary MOS inverter circuit with an organic p-type and an inorganic n-type transistor combination. The device characteristics of the p-type and the n-type transistors were generated through 2D finite element device level simulations. The(More)
Comparison is made between established one dimensional linear and nonlinear memristor drift models with Hewlett Packard (HP) experimental data to test level of agreement. Models used in first phase of work are based on a sinusoidal applied voltage. Linear and nonlinear model data as well as HP experimental data were employed to make instantaneous power(More)
Comparison is made between memristor linear, nonlinear drift models with Hewlett Packard (HP) experimental data using MATLAB mathematical model analysis. Average power predictions indicated that the experiment with 0.58mW and linear model with 0.86mW showed better agreement in comparison to nonlinear model with 1.17mW. Instantaneous power profile(More)
A simulation based comparative study of the polarization hysteresis of the ferroelectric capacitor using various ferroelectric models is presented. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for Au/Poly(vinylidene(More)
Proposed and tested is a methodology for modeling polycrystalline thin film transistors which exhibit shifts in threshold voltage due to both grain boundaries and semiconductor thickness. The process involves a model, which uses in part standard-analytic terms. It also includes terms for grain defects and for thickness added in using numerical simulation(More)
Based on the numerical model and the analytical expression developed in our previous work, the location of Fermi level in an organic semiconductor is determined using charge neutrality principle. As in our previous work, a pentacene based Organic Schottky diode is considered for the simulation and comparison of the various physical and electrical properties(More)
The fundamental aspects of trap analysis in charge transport of organic semiconductors are reviewed by focusing on the role of traps in I-V characteristics of an organic Schottky diode. A p-type organic semiconductor based device is considered and the trap distribution is assumed to vary exponentially with energy. A numerical model is developed to determine(More)
The development of low temperature, thin film transistor processes that have enabled flexible displays also present opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location,(More)
We present a modeling and simulation based study for the polarization hysteresis of ferroelectric polymers. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for the recently reported experimental data on Au/Poly(vinylidene(More)
  • 1