Wootae Lee

Learn More
This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater(More)
As silicon electronics approaches the atomic scale, interconnects and circuitry become comparable in size to the active device components. Maintaining low electrical resistivity at this scale is challenging because of the presence of confining surfaces and interfaces. We report on the fabrication of wires in silicon--only one atom tall and four atoms(More)
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001). The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on(More)
Both varistor-type bidirectional selector (VBS) and ultrathin NbO<sub>2</sub> device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (&gt;;3&#x00D7;10<sup>7</sup>A/cm<sup>2</sup>) and high selectivity (~10<sup>4</sup>). Ultrathin NbO<sub>2</sub> exhibits(More)
  • 1