Wootae Lee

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This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater(More)
We demonstrate a high-performance selection device by utilizing the concept of crested oxide barrier to suppress the sneak current in bipolar resistive memory arrays. Using a TaO(x)/TiO(2)/TaO(x) structure, high current density over 10(7) A cm(-2) and excellent nonlinear characteristics up to 10(4) were successfully demonstrated. On the basis of the defect(More)
Both varistor-type bidirectional selector (VBS) and ultrathin NbO<sub>2</sub> device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (&gt;;3&#x00D7;10<sup>7</sup>A/cm<sup>2</sup>) and high selectivity (~10<sup>4</sup>). Ultrathin NbO<sub>2</sub> exhibits(More)
In this study, we propose a new and effective methodology for improving the resistive-switching performance of memory devices by high-pressure hydrogen annealing under ambient conditions. The reduction effect results in the uniform creation of oxygen vacancies that in turn enable forming-free operation and afford uniform switching characteristics. In(More)
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