Wootae Lee

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This paper describes the resistive switching of a cross-point cell array device, with a junction area of 100 nm x 100 nm, fabricated using ultraviolet nanoimprinting. A GdO(x) and Cu-doped MoO(x) stack with platinum top and bottom electrodes served as the resistive switching layer, which shows analog memory characteristics with a resistance ratio greater(More)
Both varistor-type bidirectional selector (VBS) and ultrathin NbO<sub>2</sub> device with threshold switching (TS) characteristics were investigated. A highly non-linear VBS showed superior performances including high current density (&gt;;3&#x00D7;10<sup>7</sup>A/cm<sup>2</sup>) and high selectivity (~10<sup>4</sup>). Ultrathin NbO<sub>2</sub> exhibits(More)
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