Wong Yong Choi

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Silicon ( 111) and Silicon(100) were employed for fabrication of TiO2 films by metal organic chemical vapor deposition( MOCVD). Titanium(IV) isopropoxide(Ti[O(C3H7)4] ) was used as a precursor. The as-deposited TiO2 films were characterized with FE-SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous Orange II . And(More)
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