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Journals and Conferences
We report 23W output from optically pumped semiconductor laser in a near-diffraction limited beam using one OPSL chip in the resonator. The OPSL device needs no antireflective coating, and exploits the strong subcavity gain enhancement.
Up to 136 mW of cw single-frequency output at 295 nm was obtained from a frequency-quadrupled optically pumped semiconductor laser. The highly strained InGaAs quantum-well semiconductor laser operates at 1178 nm in a single frequency. The single-frequency intracavity-doubled 589 nm output is further converted to 295 nm in an external resonator using… (More)
High brightness spectral beam combination of two high-power vertical-external-cavity surface-emitting laser (VECSEL) using volume Bragg grating in a photo-thermo-refractive (PTR) glass is demonstrated. High efficiency beam combination in excess of 90% is achieved, providing an efficient method for power scaling of diffraction limited beam. The beam quality… (More)