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Journals and Conferences
An InP-based monolithic integrated photoreceiver with a bandwidth of 27 GHz is presented. The device consists of a waveguide fed pin-photodiode and a traveling wave amplifier with coplanar waveguides based on four InAlAs/InGaAs/InP-HFET. The integration concept, receiver design, fabrication process and characterization are shown. The presented concept… (More)
An InP ring resonator with an experimentally demonstrated quality factor (Q) of the order of 10(6) is reported for the first time. This Q value, typical for low loss technologies such as silica-on-silicon, is a record for the InP technology and improves the state-of-the-art of about one order of magnitude. The cavity has been designed aiming at the Q-factor… (More)
40-Gbit/s photoreceiver modules for 1.55-/spl mu/m TDM system applications covering RZ and NRZ coding are described. The modules contain an InP-OEIC with a monolithic integration of a waveguide-integrated photodiode and a traveling-wave amplifier.