Wolfgang Gustin

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Measuring the degradation of modern devices subjected to bias temperature stress has turned out to be a formidable challenge. Interestingly, measurement techniques such as fastVth, on-the-fly ID,lin, and charge-pumping give quite different results. This has often been explained by the inherent recovery in non-on-the-fly techniques. Still, all these(More)
We present a model for AC NBTI which is based on capture and emission of charges in and out of oxide border traps. Capture and emission time constants of these traps are widely distributed from <μs to >10s and have been experimentally determined. The model gives a good quantitative understanding of experimental data from alternating stress / recovery(More)
BTI is shown to be the most important device degradation mechanism for combinational logic. Significant benefits regarding lifetime predictions and the total effort in measurement time can be expected from measurements minimizing recovery by a short measuring delay or/and assessments being done with AC stress for applications ensuring AC operation only.
NBTI degradation and recovery have been investigated for 7 to 50nm oxides and compared to a thin 2.2nm nitrided oxide. A wide regime of stress fields 2.5MV/cm to 8MV/cm has been covered. NBTI effect for the nitrided oxide is larger than for non-nitrided oxides. The percentage of threshold shift DeltaVth which is "lost" during a long measurement delay -(More)
Short term threshold instabilities may cause erratic behavior in analog circuits like comparators and analog-to-digital-converters. As conventional characterization procedures have not been appropriately sensitized to such issues, this kind of erratic behavior usually only occurs in products where it is very difficult to identify. Therefore, for example(More)
Negative bias temperature instability (NBTI) degradation and recovery have been investigated for 7–50-nm nonnitrided oxides and compared to thin 1.8and 2.2-nm nitrided oxides from a dual work function technology. A wide regime of stress fields from 2.5 to 10 MV/cm has been covered. Thermal activation has been studied for temperatures from 25 ◦C to 200 ◦C.(More)
Negative Bias Temperature Instability (NBTI) of pMOSFETs is nowadays the most prominent device degradation mechanism reported in the literature and a limiting factor for CMOS technology scaling. In contrast, for Positive Bias Temperature Instability (PBTI) of pMOSFET only very few publications can be found [1&#x2013;4]. Most of the PBTI work is done for(More)
NBTI parameter degradation of MOSFETs shows a statistical variation. The distribution of the threshold voltage Vth after NBTI stress originates from a convolution of the distribution of the virgin devices together with the additional distribution of the NBTI degradation itself. The variability of the Vth (and other electrical parameters) of the virgin(More)
The NBTI recovery phenomenon leads to a fast reduction of the stress induced electrical device parameter degradation after end of stress. Delay times between device-stress and -characterization within NBTI-experiments affect the measurement values of degradation. This work discusses the impact of these delays on lifetime prediction for technology(More)