Wittawat Yamwong

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Hot-carrier degradation phenomena in n-channel MOSFETs (NMOSFETs) through the comparison between conventional and lightly doped drain (LDD) structure of 0.8-mum CMOS technology was described. This phenomenon was also observed in the conventional NMOSFETs. This is because of hot-electron trap in the gate accumulating carriers (holes) along the channel region(More)
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