William S Y Wong

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Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors Appl. Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors Appl. A universal law to characterize ohmic contacts of small high electron mobility transistors(More)
—A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 64 pixel (300 m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of 3.5 V, carrier mobility of 0.7 cm 2 V s, subthreshold slope of 0.76(More)
Disordered silicon nanowires are diffuse optical reflectors, with reflectivity modified by the nanowire absorption. We present an analytical model which describes the reflectivity, absorption, and transmission of a nanowire mat, across a wide spectral range, and including substrate effects. The model provides the ability to predict the optical properties of(More)
The performance and degradation characteristics of continuous-wave ͑cw͒ InGaN multiple-quantum-well laser diodes are reported. A cw threshold current as low as 62 mA was obtained for ridge-waveguide laser diodes on epitaxially laterally overgrown GaN on sapphire substrates grown by metalorganic chemical vapor deposition. Transmission electron microscopy(More)
Superhydrophobic materials with excellent humidity tolerance, high porosity and light transmittance are being investigated for numerous applications including moisture-sensitive catalysts and perovskite solar cells. Here, we report the one-step solvent-free synthesis of ultraporous superhydrophobic nano-layers by the on-the-fly functionalization of(More)
In nature, durable self-cleaning surfaces such as the Lotus leaf rely on the multiscale architecture and cohesive regenerative properties of organic tissue. Real-world impact of synthetic replicas has been limited by the poor mechanical and chemical stability of the ultrafine hierarchical textures required for attaining a highly dewetting superhydrophobic(More)
Silicon nanowire (SiNW) field-effect transistors (FETs) were fabricated from nanowire mats mechanically transferred from a donor growth wafer. Top- and bottom-gate FET structures were fabricated using a doped a-Si:H thin film as the source/drain (s/d) contact. With a graded doping profile for the a-Si:H s/d contacts, the off-current for the hybrid(More)
Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors Appl. Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors Appl. A universal law to characterize ohmic contacts of small high electron mobility transistors(More)
ŠFLEXIBLE LARGE-AREA ELECTRONICS have the potential to enable a wide range of new functionalities in display and sensor applications. 1 Monolithic integration of amorphous, silicon-based, thin-film devices dominates the display and sensor industry. In contrast, circuits on flexible plastic substrates are limited by major constraints, ranging from materials(More)
The performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400(More)