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Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors Appl. Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors Appl. A universal law to characterize ohmic contacts of small high electron mobility transistors(More)
—A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 64 pixel (300 m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of 3.5 V, carrier mobility of 0.7 cm 2 V s, subthreshold slope of 0.76(More)
The performance and degradation characteristics of continuous-wave ͑cw͒ InGaN multiple-quantum-well laser diodes are reported. A cw threshold current as low as 62 mA was obtained for ridge-waveguide laser diodes on epitaxially laterally overgrown GaN on sapphire substrates grown by metalorganic chemical vapor deposition. Transmission electron microscopy(More)
Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors Appl. Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors Appl. A universal law to characterize ohmic contacts of small high electron mobility transistors(More)
ŠFLEXIBLE LARGE-AREA ELECTRONICS have the potential to enable a wide range of new functionalities in display and sensor applications. 1 Monolithic integration of amorphous, silicon-based, thin-film devices dominates the display and sensor industry. In contrast, circuits on flexible plastic substrates are limited by major constraints, ranging from materials(More)
The performance characteristics are reported for continuous-wave (cw) InGaN multiple-quantum-well laser diodes grown on epitaxially laterally overgrown GaN on sapphire substrates by metalorganic chemical vapor deposition. Room-temperature cw threshold currents as low as 41mA with operating voltages of 6.0V were obtained. The emission wavelength was near 400(More)
A novel voltage-programmed pixel circuit using hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) for active-matrix organic light-emitting diode (AMOLED) displays is proposed. The threshold voltage shift (&#x0394;V<sub>T</sub>) of the drive TFT due to electrical stress is compensated by the change of gate-to-source voltage(More)
A hybrid sensor and display pixel and its operating scheme are proposed. The circuit consists of two main parts: 1) the light sensor and 2) the integrated display onto the backplane. Hybrid a-Si:H/Nanocrystalline silicon (nc-Si) TFTs were used as a hybrid phototransistor incorporating both sensing and switching on the same device. The display backplane(More)