William McGenn

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General rights This document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: Explore Bristol Research is a digital archive and the intention is that deposited content should not be removed. However, if you believe that this version of the work(More)
Solid state power amplifiers are ordinarily fitted with an isolator at the output port to protect the transistors from large variations in the load impedance. Using GaN transistor technology should allow safe transistor operation to higher field levels and also to higher channel temperatures, which may remove the necessity for the isolator component(More)
Solid state amplifiers are often fitted with an isolator component on the output to protect them from impedance mismatch. GaN based HFET's could offer the potential to remove the isolator due to their high breakdown voltages and high channel temperature operation. However the absence of an isolator would mean that the transistor would have to be able to(More)
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