We demonstrate the generation of a supercontinuum in a 2 cm long silicon wire by pumping the wire with mid-infrared picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1535 nm up to 2525 nm for a coupled peak power of 12.7 W. It is shown that the supercontinuum originates primarily from the amplification of background… (More)
—An investigation of signal integrity in silicon pho-tonic nanowire waveguides is performed for wavelength-division-multiplexed optical signals. First, we demonstrate the feasibility of ultrahigh-bandwidth integrated photonic networks by transmitting a 1.28-Tb/s data stream (32 wavelengths 40-Gb/s) through a 5-cm-long silicon wire. Next, the crosstalk… (More)
with BER 10 12 , with less than 10-dB crosstalk and 7-dB loss.
We measure signal degradation from inter-channel crosstalk of ultrahigh-bandwidth signals in silicon-on-insulator waveguides, and single-channel power penalty over a range of injection powers. The results validate the suitability of silicon-based nanowire interconnects for broadband WDM networks. Introduction Photonic integrated circuits (PICs) present the… (More)
The emerging field of silicon photonics [1-3] targets monolithic integration of optical components in the CMOS process, potentially enabling high bandwidth, high density interconnects with dramatically reduced cost and power dissipa-tion. A broadband photonic switch is a key component of reconfigurable networks which retain data in the optical domain, thus… (More)
Photonic integrated circuits employing microcavities coupled to optical waveguides have been studied extensively in recent years, for their ability to provide functionality important to optical telecommunications, within a compact form. Making use of the amplitude response imparted by the resonator upon the transmission spectrum of the coupled waveguide,… (More)
Silicon photonics has recently been proposed for a diverse set of applications at mid-infrared wavelengths 1, 2 , the implementation of which require on-chip photodetectors. In planar geometries, dopant-based extrinsic photoconductors have long been used for mid-infrared detection with Si and Ge acting as host materials 3. Leveraging the dopant-induced… (More)
We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled ͑redshift of 140Ϯ 10 pm per atomic layer͒ without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential… (More)