with BER 10 12 , with less than 10-dB crosstalk and 7-dB loss.
We demonstrate the generation of a supercontinuum in a 2 cm long silicon wire by pumping the wire with mid-infrared picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1535 nm up to 2525 nm for a coupled peak power of 12.7 W. It is shown that the supercontinuum originates primarily from the amplification of background… (More)
—An investigation of signal integrity in silicon pho-tonic nanowire waveguides is performed for wavelength-division-multiplexed optical signals. First, we demonstrate the feasibility of ultrahigh-bandwidth integrated photonic networks by transmitting a 1.28-Tb/s data stream (32 wavelengths 40-Gb/s) through a 5-cm-long silicon wire. Next, the crosstalk… (More)
Receiver based on Ge waveguide PD hybrid-integrated with CMOS amplifier shows an unprecedented data rate of 20Gbps, −7.1dBm sensitivity, and 7pJ/bit power efficiency. Further improvement is obtained with avalanche gain and feed-forward equalization.
We measure signal degradation from inter-channel crosstalk of ultrahigh-bandwidth signals in silicon-on-insulator waveguides, and single-channel power penalty over a range of injection powers. The results validate the suitability of silicon-based nanowire interconnects for broadband WDM networks. Introduction Photonic integrated circuits (PICs) present the… (More)
A CMOS driver and broadband silicon photonic switch are co-designed and wire-bond packaged. The integrated switch demonstrates less than 2.1-ns transition times, better than 15-dB extinction, and 5.9-mW total power consumption.
The emerging field of silicon photonics [1-3] targets monolithic integration of optical components in the CMOS process, potentially enabling high bandwidth, high density interconnects with dramatically reduced cost and power dissipa-tion. A broadband photonic switch is a key component of reconfigurable networks which retain data in the optical domain, thus… (More)
A silicon microring modulator is demonstrated utilizing IBM CMOS Silicon Nanophotonics technology, achieving 30Gbps operation at a power consumption of ∼335fJ/bit in a device suitable for monolithic integration.