Learn More
We demonstrate the generation of a supercontinuum in a 2 cm long silicon wire by pumping the wire with mid-infrared picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1535 nm up to 2525 nm for a coupled peak power of 12.7 W. It is shown that the supercontinuum originates primarily from the amplification of background(More)
—An investigation of signal integrity in silicon pho-tonic nanowire waveguides is performed for wavelength-division-multiplexed optical signals. First, we demonstrate the feasibility of ultrahigh-bandwidth integrated photonic networks by transmitting a 1.28-Tb/s data stream (32 wavelengths 40-Gb/s) through a 5-cm-long silicon wire. Next, the crosstalk(More)
The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die(More)
We measure signal degradation from inter-channel crosstalk of ultrahigh-bandwidth signals in silicon-on-insulator waveguides, and single-channel power penalty over a range of injection powers. The results validate the suitability of silicon-based nanowire interconnects for broadband WDM networks. Introduction Photonic integrated circuits (PICs) present the(More)
A pulsed mid-infrared pump at λ=2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2 cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (β2) and positive fourth-order (β4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm-2486 nm.(More)