Wilfried Vandervorst

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The basic unit of information in filamentary-based resistive switching memories is physically stored in a conductive filament. Therefore, the overall performance of the device is indissolubly related to the properties of such filament. In this Letter, we report for the first time on the three-dimensional (3D) observation of the shape of the conductive(More)
Germanium combined with high-k dielectrics has recently been put forth by the semiconductor industry as potential replacement for planar silicon transistors, which are unlikely to accommodate the severe scaling requirements for sub-45-nm generations. Therefore, we have studied the atomic layer deposition sALDd of HfO2 high-k dielectric layers on HF-cleaned(More)
In the recent past, filamentary-based resistive switching devices have emerged as predominant candidates for future non-volatile memory storage. Most of the striking characteristics of these devices are still limited by the high power consumption and poor understanding of the intimate resistive switching mechanism. In this study, we present an atomic scale(More)
On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory(More)
Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted models explain the resistive switching in these devices through the presence/absence of a conductive filament (CF) that is described as a reversible nanosized valence-change in an oxide material. During(More)
Nowadays, technological developments towards advanced nano scale devices such as FinFETs and TFETs require a fundamental understanding of three-dimensional doping incorporation, activation and diffusion, as these details directly impact decisive parameters such as gate overlap and doping conformality and thus the device performance. Whereas novel doping(More)
The successful implementation of nanowire (NW) based field-effect transistors (FET) critically depends on quantitative information about the carrier distribution inside such devices. Therefore, we have developed a method based on high-vacuum scanning spreading resistance microscopy (HV-SSRM) which allows two-dimensional (2D) quantitative carrier profiling(More)
The introduction of millisecond annealing in advanced CMOS process flows turns out to generate considerable temperature variations which can enhance the device dispersion. In the present work we report on the use of inline Therma-Probe (TP) and Micro Four-Point Probe (M4PP) metrology to assess these temperature variations on shallow trench isolation (STI)(More)