Wilfried Vandervorst

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On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory(More)
Germanium combined with high-␬ dielectrics has recently been put forth by the semiconductor industry as potential replacement for planar silicon transistors, which are unlikely to accommodate the severe scaling requirements for sub-45-nm generations. Therefore, we have studied the atomic layer deposition ͑ALD͒ of HfO 2 high-␬ dielectric layers on HF-cleaned(More)
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