Learn More
Novel high-k MIM capacitor technology for mixed-signal/RF applications has been successfully developed by introducing multilayered high-k dielectric(Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/)(More)
The effects of Zr composition on the crystallization behaviors and reliability characteristics of atomic-layer-deposited Hf<sub>1-x</sub> Zr<sub>x</sub>O<sub>y</sub> (0 ≤ x ≤ 1) gate-dielectric films(More)
  • 1