Wenxiang Jian

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A novel method for SRAM cell standby leakage measurement is presented, which enables accurate testing and decoupling of sub-threshold leakage (I_sub), gate leakage (I_gate) and junction leakage (I_junc) in each SRAM cell transistor. Moreover, the array based technique can not only precisely measure small current but also compensate the impact from random(More)
A 64 Kb logic Resistive Random Access Memory (RRAM) test chip for encryption keys storage is presented for the first time. The excellent security features of resisting physical attacks and side-channel attacks are theoretically analyzed and experimentally proved. The chip is fabricated in 0.13 µm standard logic process, and can directly integrate with(More)
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