Wenwei Yang

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FinFET is a non planar modeling device for small size transistors (less than 45nm) will replace traditional planar MOSFETs because of superior ability to control short channel effects, off-state leakage current, power dissipation and propagation delay. Static random access memories (SRAMs) consume nearly 94% of chip area in most present system-on-chip (SoC)(More)
In this work, the dominant quantum effects in nano devices are investigated by the full quantum simulation based on the QDAME algorithm, which is suitable to analyze the quantum open system. Compared with the classical drift-diffusion mechanism, the full quantum simulation predicts that due to the carrier tunneling from source to drain in off-state, the(More)
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