Wen-Teng Chang

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This paper describes the miscibility and self-assembly, mediated by hydrogen-bonding interactions, of new block copolymer/nanoparticle blends. The morphologies adopted by the immiscible poly[(ε-caprolactone)-block-(4-vinyl pyridine)] (PCL-b-P4VP) diblock copolymer changes upon increasing the number of competitive hydrogen-bonding interactions after adding(More)
This manuscript describes the findings of a study to investigate the performance of SiC MEMS resonators with respect to resonant frequency and quality factor under a variety of testing conditions, including various ambient pressures, AC drive voltages, bias potentials and temperatures. The sample set included both single-crystal and polycrystalline 3C-SiC(More)
Single-bridged (SB) and multi-bridged (MB) carbon nanotubes (CNTs) were laterally grown between two electrodes capped on a thin nickel film, which functioned as catalysts. SB CNTs with outermost shell-end and embedded-end contacts on the electrodes showed varistor- or metal-like current-voltage (IV) characteristics. The devices were measured with(More)
In this work, we investigate the impact of junction dose distribution (LDD/halo) on device characteristic variation and symmetry for ultra-thin body and bulk oxide silicon on insulator (UTBB SOI) nMOSFET. The device performance and hot carrier induced degradations have also been examined. High junction doping profile will enhances the device's driving(More)
Singleand multi-carbon nanotubes (CNTs) were laterally self-assembled and grown between two electrodes. Input voltage superimposed with various biases on the devices showed that semiconductor-like CNTs have tunable rectification with changing bias. In contrast, output voltage was insignificant for linear I-V (ohmic contact). The equivalent resistance was(More)
The effects of hot carrier injection on double-gate FinFETs with fin widths (W<sub>fin</sub>) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow W<sub>fin</sub> exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias(More)
In the current study, stress-induced capacitance determined by direct measurement on MOSFETs was compared with that determined by indirect simulation through the delay of CMOS ring oscillators (ROs) fabricated side by side with MOSFETs. External compressive stresses were applied on 〈110〉 silicon-on-insulator (SOI) n-/p-MOSFETs with the ROs in a longitudinal(More)
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