Wen-Li Sung

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Random dopant fluctuation (RDF) is one of fluctuation sources in sub-7-nm semiconductor technology node. In this paper, we estimate the timing and power fluctuations on 10- nm-gate gate-all-around (GAA) silicon nanowire (NW) complementary metal-oxide-semiconductor (CMOS) circuit induced by various random discrete dopants (RDDs) from channel (with/without(More)
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