Wen-Kuan Yeh

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Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive(More)
  • Kwang-Jow Gan, Kuan-Yu Chun, Wen-Kuan Yeh, Yaw-Hwang Chen, Wein-So Wang
  • 2015
The behavior of two frequency divider circuits using negative differential resistance (NDR) circuit is studied. This NDR circuit is made of three resistors (R) and two bipolar-junction-transistor (BJT) devices. It can show the NDR characteristic in its current-voltage curve by suitably designing the resistances. We discuss a dynamic frequency divider, which(More)
Negative-bias temperature instability (NBTI) on high-k metal-gate SiGe p-channel MOSFETs has been examined. SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data. Impact of NBTI reliability on digital and RF circuits has been also examined using extracted(More)
In this work, influences of oxygen effect on an Hf-based high-k gate dielectric were investigated. A post deposition annealing (PDA) including oxygen ion after high-k dielectric deposition was used to improve reliability of the Hf-based high-k/metal gate device. The basic electrical characteristics of devices were compared with and without the PDA process.(More)
Keywords: SOI Strained SOI Strain silicon Contact etch stop layer (CESL) Gate oxide reliability TDDB Low frequency noise (LFN) a b s t r a c t This study investigates the effects of oxide traps induced by SOI of various thicknesses (T SOI = 50, 70 and 90 nm) on the device performance and gate oxide TDDB reliability of Ni fully silicide metal-gate strained(More)
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