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In this paper, a new application of phase change material GeSnSbTe (GSST) is proposed for high-speed phase-change memory (PCM). The device characteristics of PCM employing GeSnSbTe and conventional Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) are compared. Because of high crystallization speed, the GSST device demonstrates the benefits of shorter SET(More)
A novel PCM cell with double GST thermally confined structure was proposed and fabricated in this work. by inserting an extra bottom GST layer under the confined GST region, the heat loss can be effectively prevented and the temperature profile over active region becomes more uniform. thus, a low reset current less than 0.3 ma can be achieved and the set(More)
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