Wei-Ling Chang

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A low-power sub-harmonic direct-down receiver is demonstrated using 0.18 μm CMOS technology. The dynamic range of the receiver is increased by incorporating voltage gain controls with wide tuning range at RF and IF stages. For the flicker noise problem, vertical-NPN bipolar junction transistors (BJTs) in standard CMOS process are employed as the(More)
A fully integrated 0.15-μm AlGaAs/InGaAs pseudomorphic high electron mobility transistor (pHEMT) divide-by-three injection locked frequency divider (ILFD) with Marchand balun is demonstrated in this paper. The Marchand Balun provides broadband and balanced differential signals at millimeter wave frequencies due to the low loss GaAs semi-insulating(More)
This paper demonstrates a new temperature insensitive bias circuit using a Wilson current mirror for the InGaP/GaAs HBT power amplifier. The Wilson current mirror has a high impedance node for connecting an on/off digital interface and a stable voltage node for injection of feedback signals to achieve a temperature insensitive bias. The fabricated output(More)
A 2.4/5.8-GHz dual-band programmable-gain upconverter with a constant IF bandwidth is demonstrated using 0.35-µm SiGe BiCMOS technology. Using a current-mode design approach, the input IF bandwidth remains the same at different gain settings. A dual-band LC current combiner is used at the mixer RF output to combine differential signals to a(More)
A V-band dual-conversion down-converter with the Schottky-diode first conversion mixer and the analog Gilbert second conversion mixer is demonstrated using 0.15-μm pseudomorphic high electron mobility transistor (pHEMT) technology. The diode mixer based on quarter-wavelength design methodology occupies a reasonable real estate at millimeter-wave(More)
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