Wei-Chao Zhou

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In this paper, a U-shape fin field-effect transistor (U-FinFET) is proposed for sub-10nm technology and low power applications. Compared with the conventional tri-gate fin field-effect transistor (FinFET), this structure has the advantages of relatively low off-state channel leakage current (I<sub>off</sub>) and sub-threshold swing (SS). By using Sentaurus(More)
Spin-on-dopant and rapid thermal diffusion are used as the doping method for fabricating planar tunneling field effect transistor (TFET) in this paper to acquire abrupt doping profile and high surface doping concentration. Due to the heavy surface doping the on-current of TFET is enhanced. The ambipolar characteristics of TFET are also inhibited by reducing(More)
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