Wayne Wang

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The fast bit cell current (BCC) reduction in a one-time programming (OTP) device during high-temperature annealing will severely decrease the data retention (DR) capability. It is found that negative bias temperature instability-like degradation is responsible for this fast BCC shift, which is different from the well-known DR mechanism. The rapid floating(More)
A file system structure has been designed that is adapted to the peculiarities of write-once optical disk storage media. Key requirements are that the medium be consistent at all times and that large amounts of storage are not wasted in maintaining the directory information appropriate to a normal read/write file system. The file system is implemented in(More)
A comprehensive reliability analysis of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (pSTT-MRAM) is demonstrated that pSTT-MRAM is capable of fast write, more than 107 cycles endurance, less than 10<sup>-20</sup> read disturb error rate at 125&#x00B0;C, and 10 years data retention up to 225&#x00B0;C at chip level. Furthermore, we prove(More)
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