Wanqing Xin

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Compared with the common junction barrier Schottky (JBS) rectifier, a recently reported SiC JBS device with P+ grids on P-well (POP) exhibited an increasing breakdown voltage and Baliga's figures of merit (4&#x00D7;Vbr<sup>2</sup>/Ron) due to a uniform electric field. To further enhance the performance, an improved POP structure is proposed. It features the(More)
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