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A low-power RF wideband amplifier is presented. It has a 24.3 dB power gain, -3 dB bandwidth of 3.2 GHz, and consumes 23.7 mW power with a 2 V power supply. The circuit is implemented using Si bipolar process, NT25, which has f/sub T/ of 25 GHz. Both input and output impedances are matched at 50 ohms. This amplifier is suitable for applications that require(More)
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