Wang Cuixia

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Low FOM (Figure-of-merit) planar MOSFET is presented in this paper. The p-base of the developed MOSFET is formed by self-aligned ion implanted. Only four masks is used to fabrication while the performance of the developed MOSFET is better than the present conventional MOSFET. The optimized 20V rated MOSFET exhibits about 7.8m&#x03A9;&#x00B7;mm<sup>2</sup>(More)
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