Walter Riess

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The operation of electronic devices relies on the density of free charge carriers available in the semiconductor; in most semiconductor devices this density is controlled by the addition of doping atoms. As dimensions are scaled down to achieve economic and performance benefits, the presence of interfaces and materials adjacent to the semiconductor will(More)
We present a study on the scaling behavior of fieldeffect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel(More)
The kinetics of chlorthalidone in blood and urine were analysed in one group of 6 healthy volunteers after single oral doses of 50, 100 and 200 mg, as well as in a second group of 6 volunteers during and after daily oral doses of 50 mg for 14 days. The mean maximal concentrations recorded in blood 8 h after the three different doses were 3.15 µg/ml(More)
Bulk syntheses of colloids efficiently produce nanoparticles with unique and useful properties. Their integration onto surfaces is a prerequisite for exploiting these properties in practice. Ideally, the integration would be compatible with a variety of surfaces and particles, while also enabling the fabrication of large areas and arbitrarily high-accuracy(More)
Postoperative analgesia and the side effects of epidurally injected morphine were investigated in a double-blind study. Following lumbar epidural anesthesia for orthopedic operations, 174 patients received, in a randomized, double-blind fashion, either 0.1 mg/kg of morphine epidurally, 0.1 mg/kg of morphine intramuscularly, or saline epidurally at the end(More)
This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventionaltype NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep(More)
Semiconducting nanowires have recently attracted considerable attention. With their unique electrical and optical properties, they offer interesting perspectives for basic research as well as for technology. A variety of technical applications, such as nanowires as parts of sensors, and electronic and photonic devices have already been demonstrated. In(More)