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- C.Y. Ngo, S. F. Yoon, W. J. Fan, S. J. Chua
- 2006 International Conference on Numericalâ€¦
- 2006

A strained-modified, single-band, constant-potential three-dimensional model was applied to study the dependence of electronic states of InAs/GaAs quantum dots (QDs) of different shapes and sizes.â€¦ (More)

- Zheng Fang, H. Y. Yu, +7 authors D. L. Kwong
- IEEE Transactions on Electron Devices
- 2013

A conduction model consisting of two parallel resistances from a highly conductive filament region and a uniform leakage oxide region is proposed in this brief to represent the current conduction inâ€¦ (More)

- W.K. Cheah, W. J. Fan, +5 authors A.T.S. Wee
- IEEE Photonics Technology Letters
- 2005

GaAs-based double-heterojunction p-i-n photodetectors using In/sub z/Ga/sub 1-z/As/sub 1-x-y/N/sub x/Sb/sub y/ in the i layer is fabricated for the first time using the solid source molecular beamâ€¦ (More)

- Z.G. Zhu, T. Low, +4 authors G. S. Samudra
- 2006 International Electron Devices Meeting
- 2006

Band structure of III-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predictsâ€¦ (More)

- D W Xu, S. F. Yoon, C Z Tong, L. J. Zhao, Yi Ding, W. J. Fan
- IEEE Photonics Technology Letters
- 2009

In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QDâ€¦ (More)

- T. Low, M. F. Li, +6 authors D. L. Kwong
- IEDM Technical Digest. IEEE Internationalâ€¦
- 2004

Ultra-thin body (UTB) SOI MOSFET is promising for sub-50 nm CMOS technologies (ITRS, 2003). However, recent experimental finding by Uchida (2002) suggests the need for serious reconsiderations of itsâ€¦ (More)

- C. Y. Liu, S. F. Yoon, W. J. Fan, A. T. M. Jashim Uddin, S. Yuan
- IEEE Photonics Technology Letters
- 2006

InGaAsN triple-quantum-well (TQW) ridge waveguide (RWG) lasers were fabricated with contact ridge width of 4, 10, 50, and 100 /spl mu/m, respectively, using pulsed anodic oxidation (PAO). All theseâ€¦ (More)

- C Z Tong, D W Xu, S. F. Yoon, Yi Ding, W. J. Fan
- IEEE Journal of Selected Topics in Quantumâ€¦
- 2009

In this paper, we present results from room-temperature continuous-wave operation of 1.3-mum p-doped InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with high T 0 of ~510â€¦ (More)

- C. Y. Liu, S. F. Yoon, S. F. Wang, W. J. Fan, Yan Qu, S. Yuan
- IEEE Photonics Technology Letters
- 2004

We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm/sup 2/ wasâ€¦ (More)

- Jian Chen, W. J. Fan, D. H. Zhang, Qiang Xu, X. W. Zhang
- 2013 IEEE 5th International Nanoelectronicsâ€¦
- 2013

The electronic band structures and optical gains of Ge/SixSnyGe1-x-y truncated pyramid-shaped quantum dots (QDs) are calculated using the 8-band k.p model. The large bowing factors in the calculationâ€¦ (More)