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Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications

• W. C. B. Peatman, H. Park, Meredith Shur
• IEEE Electron Device Letters
• 1994

We describe a novel 2-dimensional metal-semiconductor field effect transistor (2-D MESFET) in which opposing Schottky side gates formed on the sidewall of a modulation-doped AlGaAs-InGaAs… (More)

Heterodimensional field effect transistors for ultra low power applications

• Jian-Qiang Lu, M. J. Hurt, W. C. B. Peatman, M. S. Shur
• GaAs IC Symposium. IEEE Gallium Arsenide…
• 1998

We describe a new class of field effect transistors (FETs) based on a heterodimensional contact between a three-dimensional gate (metal or semiconductor) and a two-dimensional electron gas. The… (More)

Diagnostic front end for BESSY II.

• W. C. B. Peatman, Klaus Holldack
• Journal of synchrotron radiation
• 1998

For BESSY II, synchrotron radiation beam diagnostics will be incorporated in both the insertion-device front ends and the dipole-beamline front ends. In order to gain a complete picture of the source… (More)

Sub-half-micrometer width 2-D MESFET

• W. C. B. Peatman, R. Tsai, +4 authors Meredith Shur
• IEEE Electron Device Letters
• 1996

Two-dimensional (2-D) MESFET's having sub-half-micron channel widths have been fabricated on double-/spl delta/-doped Al/sub 0.24/Ga/sub 0.76/As/In/sub 0.18/Ga/sub 0.82/As/GaAs heterostructures. The… (More)

Novel resonant tunneling transistor with high transconductance at room temperature

• W. C. B. Peatman, E. Richard P. Brown, M. J. Rooks, Pauline M. Maki, W Grimm, Meredith Shur
• IEEE Electron Device Letters
• 1994

A resonant tunneling transistor (RTT) utilizing a novel heterodimensional Schottky gate technology is described. The gate is formed by electroplating Pt/Au onto the side of an AlGaAs/GaAs double… (More)

Brilliant, coherent far-infrared (THz) synchrotron radiation.

• M. Abo-Bakr, Jörg Feikes, +5 authors H. A. Huebers
• Physical review letters
• 2003

A new technology for generating steady state, brilliant, broadband, coherent, far-infrared (FIR) radiation in electron storage rings is presented, suitable for FIR spectroscopy. An FIR power increase… (More)

A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications

• W. C. B. Peatman, T. W. Crowe, Meredith Shur
• IEEE Electron Device Letters
• 1992

A high-frequency diode is proposed for use as a frequency multiplier element in the millimeter- and submillimeter-wavelength regions. The Schottky/2-DEG diode utilizes a Schottky contact along the… (More)

Consideration of velocity saturation in the design of GaAs varactor diodes

• T. W. Crowe, W. C. B. Peatman, R. Zimmermann
• IEEE Microwave and Guided Wave Letters
• 1993

The design of GaAs Schottky barrier varactor diodes is reconsidered in light of the recent discovery of velocity saturation effects in these devices. The experimental data are presented confirm that… (More)

High-temperature characteristics of 2-D MESFETs

• Trond Ytterdal, Myra M. Hurt, Meredith Shur, H. Park, R. Tsai, W. C. B. Peatman
• IEEE Electron Device Letters
• 1996

Experimental data of 2-D MESFETs, which utilize sidewall Schottky contacts to degenerate two-dimensional electron gas, indicate a much weaker temperature dependence of the drain current compared to… (More)

Gate recess engineering of pseudomorphic In/sub 0.30/GaAs/GaAs HEMTs - Electronics Letters

• M. J. Hurt, W. C. B. Peatman, R. Tsai, Trond Ytterdal, Meredith Shur, Byung-Moo Moon
• 2004

and a 15011s time constant. These pulses are applied on the collector of the simulated devices, while their emitter and substrate are grounded. The thermal boundary condition is considered to be a… (More)

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