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A Ku-band monolithic low-noise amplifier is presented in this paper. This LNA fabricated in commercial 0.18-/spl mu/m CMOS technology is a two-stage common-source design instead of cascode configuration for lower noise performance. This CMOS LNA demonstrates a gain of better than 10 dB and a NF of better than 3.2 dB from 14 to 15 GHz. The measured output(More)
We propose a simple method to de-embed the transmission line and pad parasitics from the measured RF noise of multi-finger MOSFETs with aggressive gate length scaling down to 80 nm and 65 nm respectively. Good agreement has been realized between measurement and simulation in terms of S-parameters and NF/sub min/ (minimum noise figure) for RF CMOS devices(More)
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