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In this paper we propose a novel Pie gate bulk FinFET structure for logic applications suitable for system-on-chip (SOC) requirements. The influence of gate at bottom to junction depth, misalignment was examined for deeper junctions and shallower junctions. It has shown that bulk FinFET with source/drain to body (S/D) junctions shallower than gate at bottom(More)
A fully integrated single-band 2.4 GHz low noise amplifier (LNA) is designed by using 0.18μm CMOS technology for ZigBee applications. For healthcare applications, high power consumption is not preferred. Increasing the sensitivity of receiver, therefore, could be a solution resulting in the use of LNA. The impedance expression is mathematically(More)
The present paper proposes the SOI-MISISFET (Silicon on insulator-Metal insulator semiconductor insulator semiconductor FET) structure for the leakage current reduction and low power applications. Performance analysis of SOI-MISISFET has been carried out in this paper and the device is compared with that of conventional MOSFET and MISISFET structures. For(More)
s This study attempts to apply two teamwork learning patterns, Cooperative Learning and Collaborative Learning, to the online game-styled computer-assisted learning system. Four units of fourth-grade elementary math are implemented into the games; that students are engaged in. In addition, the study explores whether these two online game mechanisms help(More)
Ultra-high-vacuum (UHV) deposited Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO,(More)
Self-aligned inversion-channel In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFETs with ex-situ atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and in-situ ultra-high-vacuum deposited Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC(More)
Ultra-high vacuum (UHV)-deposited high Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/Ge interface is revealed to be abrupt even being subjected(More)