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This paper discusses the issue of power conservation on personal comput-ing/communication systems (PCSs) and suggests that signature methods are suitable for realtime information ltering on PCSs. Three signature-based approaches, namely simple signature, integrated signature and multi-level signature schemes are presented. The cost models for the access(More)
Indexing techniques have been developed as a means for clients to reduce p ower consumption and to select between broadcast and on-demand data services. In this paper, we provide an overview of our research on indexing techniques and revisit some related work in the literature. Our study incorporates two important techniques, clustering and scheduling, for(More)
A fully integrated single-band 2.4 GHz low noise amplifier (LNA) is designed by using 0.18μm CMOS technology for ZigBee applications. For healthcare applications, high power consumption is not preferred. Increasing the sensitivity of receiver, therefore, could be a solution resulting in the use of LNA. The impedance expression is mathematically(More)
We are witnessing in recent y ears growing interest for location-dependent information services among mobile users. This paper examines the issue of processing location-dependent queries in a mobile broadcast environment. Diierent from a traditional environment, mobile users are concerned with not only access latencies but also power conservation. The(More)
Self-aligned inversion-channel In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFETs with ex-situ atomic-layer-deposited Al<inf>2</inf>O<inf>3</inf> and in-situ ultra-high-vacuum deposited Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC(More)
Ultra-high vacuum (UHV)-deposited high Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) was proved to passivate Ge effectively, as evidenced by comprehensive investigations including structural, chemical, and electrical analyses. The Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/Ge interface is revealed to be abrupt even being subjected(More)
Ultra-high-vacuum (UHV) deposited Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>) [GGO] has been employed for passivating InGaAs and Ge, without using any interfacial paissivation layers (IPLs). The GGO/InGaAs and /Ge metal-oxide-semiconductor capacitors (MOSCAPs) have exhibited low capacitance-equivalent-thickness (CET) of less than 1nm in GGO,(More)