W Beall Fowler

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The 3618.4 and 2642.6 cm(-1) infrared absorption lines of interstitial H(2) and D(2) in silicon have been studied under applied uniaxial stresses. The resulting splittings and their small dependence on isotope establish that H(2) in Si is a nearly free rotor and that these lines arise from vibrational transitions between rovibrational states with rotational(More)
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