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This paper describes the design of a low-IF receiver front-end for Bluetooth fabricated in a 0.18 /spl mu/m CMOS technology. The chip includes an LNA and an image-reject mixer and provides a down-conversion gain to the 2 MHz IF of 21.4 dB, an image rejection of 28 dB and a NF of 13.9 dB consuming only 6.5 mW at 1.8 V.
Genetic and simplex-downhill (SD) algorithms were used for the optimization of the electron-beam lithography (EBL) step in the fabrication of microwave electronic circuits. The definition of submicrometer structures involves complex exposure patterns that are cumbersome to determine experimentally and very difficult to optimize with linear search algorithms(More)
A method to adaptively calibrate a Hartley phasing-type single-sideband (SSB) modulator for obtaining high carrier and image suppressions is presented. The Hartley SSB modulator is extended by control elements to compensate for circuit nonidealities, a monitor circuit to measure the levels of the undesired residual carrier and image tones, and a digital(More)
A design-oriented analysis of microwave transmission-line class-E and class-F amplifiers is presented in this paper. Multiharmonic transmission-line load networks are analyzed and compared in terms of harmonic suppression and their effects on output power and efficiency. Based on this study, a design of highly efficient monolithic-microwave(More)
This paper presents a design-oriented analysis of two lumped-element load-coupling topologies, which can be used to approximate class-E switching conditions. The presented output circuits are compared theoretically and experimentally with respect to harmonic termination and component values. Using a commercial BiCMOS process, two monolithic integrated(More)
A 2.45 GHz switched low-noise amplifier (LNA), intended for use in an integrated Bluetooth receiver, was implemented in a standard 0.18 /spl mu/m CMOS process. The LNA is optimized for a fully integrated mixer stage, with a mixer-input capacitance of 150 fF. The amplifier provides a switchable gain (|S/sub 21/|/sup 2/) of 7 dB/-17 dB with a noise figure(More)
A switchable GaAs MMIC cascode low noise amplifier for smart antenna combining at 5.2 GHz (HIPERLAN) is presented using a standard 0.6 /spl mu/m MESFET process. A gain of 12.3 dB and a noise figure of 2.4 dB are measured, drawing only 1.2 mA from a 1 V supply. A gain/P/sub dc/ figure of merit of 10 dB/mW is achieved, which to our knowledge is the highest(More)
This paper addresses the issue of in-plane coupling into and out of circular-grating resonators with optical waveguides for all-optical switching applications. Two different designs are proposed: the first design consists in directly accessing the cavity with the waveguides. The second design is based on optimization with an evolutionary algorithm that(More)
In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion(More)
In this paper we present RF measurements on MESFETs and spiral inductors fabricated on GaAs and transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently reattached to a new host substrate.