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Static energy due to subthreshold leakage current is projected to become a major component of the total energy in high performance microprocessors. Many studies so far have examined and proposed techniques to reduce leakage in on-chip storage structures. In this study, static energy is reduced in the integer functional units by leveraging the unique(More)
—Data stability of SRAM cells has become an important issue with the scaling of CMOS technology. Memory banks are also important sources of leakage since the majority of transistors are utilized for on-chip caches in today's high performance microprocessors. A new nine-transistor (9T) SRAM cell is proposed in this paper for simultaneously reducing leakage(More)
—The supply voltage to threshold voltage ratio is reduced with each new technology generation. The gate overdrive variation with temperature plays an increasingly important role in determining the speed characteristics of CMOS integrated circuits. The temperature-dependent propagation delay characteristics, as shown in this brief, will experience a complete(More)
Vertical integration is a novel communications paradigm where interconnect design is a primary focus. ABSTRACT | Design techniques for three-dimensional (3-D) ICs considerably lag the significant strides achieved in 3-D manufacturing technologies. Advanced design methodologies for two-dimensional circuits are not sufficient to manage the added complexity(More)
Multi-threshold voltage CMOS (MTCMOS) is an effective technique for suppressing the leakage currents in idle circuits. When the conventional MTCMOS technique is directly applied to a sequential circuit however the stored data is lost during the low-leakage sleep mode. Significant energy and timing penalties are suffered to restore the pre-sleep system state(More)
—In this brief, a low-overhead circuit technique is proposed to simultaneously reduce subthreshold and gate-oxide leakage currents in domino logic circuits. pMOS sleep transistors and a dual threshold voltage CMOS technology are utilized to place an idle domino logic circuit into a low leakage state. A sleep transistor added to the dynamic node strongly(More)
integrated circuit and fluctuations in the environmental temperature can cause significant variations in the die temperature [1]. Fluctuations in the die temperature affect the device characteristics thereby varying the performance of an integrated circuit. In this paper , the supply and threshold voltage optimization techniques to achieve temperature(More)
Circuits optimized for minimum energy consumption operate typically in the subthreshold regime with ultra-low power-supply voltages. Speed of a subthreshold logic circuit is enhanced with an increase in the die temperature. The excessive timing slack observed in the clock period of subthreshold logic circuits at elevated temperatures provides opportunities(More)