Vladyslav Vakarin

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Silicon-based photonics is now considered as the photonic platform for the next generation of on-chip communications. However, the development of compact and low power consumption optical modulators is still challenging. Here we report a giant electro-optic effect in Ge/SiGe coupled quantum wells. This promising effect is based on an anomalous(More)
We demonstrate low-loss Ge-rich Si<sub>0.2</sub>Ge<sub>0.8</sub> waveguides on Si<sub>1-x</sub>Ge<sub>x</sub> (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range at λ=4.6  μm. Propagation losses as low as (1.5±0.5)dB/cm and (2±0.5)dB/cm were measured for the quasi-TE and quasi-TM polarizations, respectively. A total coupling(More)
This work explores the use of Ge-rich graded-index Si<sub>1-</sub>xGex rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband(More)
The integration of germanium (Ge)-rich active devices in photonic integrated circuits is challenging due to the lattice mismatch between silicon (Si) and Ge. A new Ge-rich silicon-germanium (SiGe) waveguide on graded buffer was investigated as a platform for integrated photonic circuits. At a wavelength of 1550 nm, low loss bends with radii as low as 12 µm(More)
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