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Journals and Conferences
We present a semiconductor disk laser (SDL) emitting at the wavelength of 1.3 μm. The active region of the SDL comprises InAs quantum dots (QDs) that are embedded into InGaAs quantum wells (QWs). An output power over 200 mW is obtained at 15°C, which represents the highest output power reported from QD-based SDLs in this wavelength range. The results… (More)
In this paper, we demonstrate, for the first time to the best of our knowledge, utilization of Bessel beams generated from a semiconductor laser for optical trapping and manipulation of microscopic particles including living cells.
A turn on of a quantum dot (QD) semiconductor laser simultaneously operating at the ground state (GS) and excited state (ES) is investigated both experimentally and theoretically. We find experimentally that the slow passage through the two successive laser thresholds may lead to significant delays in the GS and ES turn ons. The difference between the… (More)