Vladimir Privezentsev

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Here we present the prolongation of our earlier studies [2] about of NPs formation in Si substrate by subsequently 64Zn+ and 16O+ ion implantation and thermal treatment. The Si substrates were implanted with dose of D=2&#x00D7;1016 cm<sup>-2</sup> by 64Zn+ ions with energy of E=100 keV and 16O+ ions with energy of E=30 keV. The characterization of implanted(More)
A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatment. The shape of the SIMS profiles for Zn atoms correlates(More)
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