Vladimir G. Erkov

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Layers of CaF<sub>2</sub> and BaF<sub>2</sub> were grown on Si substrates using molecular beam epitaxy. X-ray photoelectron spectroscopy has shown that the interface in Si-BaF<sub>2</sub> structure at 750&#x00B0;C is mainly formed with Si-Ba bonds. Metal-insulator structures have been formed, and capacitance-voltage characteristics (C-V and G-V(More)
The effect of reducing the homogeneous part of the monosilane oxidation process by reducing the process pressure on the properties of the SiO<inf>2</inf> layers was investigated. This led to a reduction of the surface layers roughness, decreasing the number and the size of inclusions, reducing the fixed oxide charge, permittivity at the temperature of(More)
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