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Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle

• Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
• Mathematical and Computer Modelling
• 2013

2DEG-3DEG Charge Transport Model for MOSFET Based on the Maximum Entropy Principle

• Vito Dario Camiola, Vittorio Romano
• SIAM Journal of Applied Mathematics
• 2013

Hydrogen Storage in Rippled Graphene: Perspectives from Multi-Scale Simulations

• Vito Dario Camiola, Riccardo Farchioni, Tommaso Cavallucci, Antonio Rossi, Vittorio Pellegrini, Valentina Tozzini
• Front. Mater.
• 2015

Exploring new perspectives for green technologies is one of the challenges of the third millennium, in which the need for non-polluting and renewable powering has become primary. In this context, the… (More)

On the Formulation of Entropy for a Partially Quantized Electron System in Semiconductors

• Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
• 2013

In the formulation of hydrodynamic subband models for charge carriers in semiconductors in presence of confinement effects in one or two directions, a crucial problem, in order to apply the maximum… (More)

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